By using the effective-mass approximation and the variational method, we calculate the effects of hydrostatic pressure on the binding energy for shallow-donor impurities in symmetrical GaAs/Ga_0.7Al_0.3 double quantum well structures. We consider different well and barrier widths, shallow-donor impurity positions, and hydrostatic pressures. Our results indicate that a proper knowledge of the impurity distribution inside the structure is of relevance in a quantitative compa-rison between theoretical and experimental results concerning the binding energy and optical-absorption spectra related to donor impurities in multiple quantum well systems under hydrostatic pressure.